This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
In situ mitigation of muon-induced defects in high lifetime crystalline silicon
Abstract: Crystalline silicon is used in >90% of solar cells in production, and requires both high quality material and a good understanding of the charge carrier behaviour within. Muon-based techniques are valuable tools to probe the charge carrier behaviour. However, previous muon experiments demonstrated that high-lifetime crystalline silicon could be damaged on exposure to muons, with formation of defects in the form of electron traps. These defects can be overcome by post-exposure processing, including annealing and deposition of passivating dielectrics (i.e., Al2O3). In this proposal, we seek to modify the experimental setup for silicon experiments ? exposing high lifetime silicon to muons at elevated temperatures, within a hydrogen-rich environment, or both ? to determine whether these defects can be ?repaired? in situ.
Principal Investigator: Dr Sophie Pain
Experimenter: Ms Anup Yadav
Experimenter: Mr Brendan Healy
Local Contact: Dr Koji Yokoyama
Experimenter: Dr James Lord
Experimenter: Professor John Murphy
Experimenter: Dr Nicholas Grant
DOI: 10.5286/ISIS.E.RB2510197
ISIS Experiment Number: RB2510197
Part DOI | Instrument | Public release date | Download Link |
---|---|---|---|
10.5286/ISIS.E.RB2510197-1 | EMU | 07 August 2028 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr Sophie Pain et al; (2025): In situ mitigation of muon-induced defects in high lifetime crystalline silicon, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2510197
Data is released under the CC-BY-4.0 license.