ISIS Neutron and Muon Source Data Journal

Monitoring Ionic Diffusion in C60/CoB with Temperature and Voltage

Abstract: In our previous run we successfully measured boron diffusion in C60/CoB/C60 trilayers. The structural and magnetic PNR signal was radically different after annealing at 300 ºC, with Refl1D fits showing boron diffusion both in the metal and into the molecular layer. We also completed a time-resolved PNR measurement monitoring changes at 300 ºC over 10 hours in a single Q window (up to 0.075 Å-1). Here, we will continue this research by studying ionic diffusion at higher temperature up to 350 ºC. We will also do time-resolved measurements up to 0.075 Å-1 at 260 ºCand 280 ºC to better monitor the ionic diffusion during 1 to 12 h. Finally, we will explore the effects of an electrical bias and the potential application of ionic diffusion in devices. We will attempt the electrical diffusion at 200 ºC in back-gated C60/CoB/C60 trilayers on a doped p-Silicon/SiO2substrate.

Principal Investigator: Dr Oscar Cespedes
Experimenter: Dr Mannan Ali
Experimenter: Professor Bryan Hickey
Experimenter: Mr Daniel Roe
Experimenter: Dr Christy Kinane
Local Contact: Dr Andrew Caruana
Experimenter: Professor Sean Langridge

DOI: 10.5286/ISIS.E.RB2220743

ISIS Experiment Number: RB2220743

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Oscar Cespedes et al; (2023): Monitoring Ionic Diffusion in C60/CoB with Temperature and Voltage, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2220743

Data is released under the CC-BY-4.0 license.