ISIS Neutron and Muon Source Data Journal

Copy of: Measurements of single-event burn-out of HV power devices for different technology nodes

Abstract: High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR). As a consequence, device development has to ensure adequate radiation hardness for every device technology. In order to reduce testing times accelerated irradiation tests at facilities with a nucleon energy spectrum close to the natural terrestrial CR are essential. Infineon has organized irradiation test campaigns on a regular basis. A detailed description of power device testing together with several references to our work can, e.g., be found in:Soelkner, G., Ensuring the reliability of power electronic devices with regards to terrestrial cosmic radiation, MicroelectrRel_58 (2016) pp. 39 to50.Also, a JEDEC standard, JEP151, which is based on suggestions by Infineon, has been published.

Principal Investigator: Dr Gerald Soelkner
Local Contact: Dr Carlo Cazzaniga
Experimenter: Mrs Renate Adele Bommersbach
Experimenter: Mr Matthias Benda
Experimenter: Mrs Johanna Pernul

DOI: 10.5286/ISIS.E.RB2000273

ISIS Experiment Number: RB2000273

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Gerald Soelkner et al; (2021): Copy of: Measurements of single-event burn-out of HV power devices for different technology nodes, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2000273

Data is released under the CC-BY-4.0 license.