This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Phase-change mechanism in Ga2Te3 liquid promising for high-temperature memory applications
Abstract: Phase-change materials (PCM) based on tellurides are widely used for optical storage, non-volatile memory applications and recently for neuromorphic computing. The flagship PCMs are based on germanium tellurides: GeTe, Ge2Sb2Te5, etc. which exhibit low glass transition temperatures Tg in the RESET (amorphous) state and can hardly be used above 380 K. Gallium tellurides have superior melting points and higher Tg and appear to be promising materials for memory applications at elevated temperatures. Fast transformation rate in PCMs at nanosecond scale is directly related to a low viscosity in the liquid state and a strong non-Arrhenius or fragile behavior with decreasing temperature. A detailed study of Ga-Te liquids is simply missing.
Principal Investigator: Professor Eugene Bychkov
Experimenter: Dr Mohammad Kassem
Local Contact: Dr Alex Hannon
DOI: 10.5286/ISIS.E.RB2000242
ISIS Experiment Number: RB2000242
Part DOI | Instrument | Public release date | Download Link |
---|---|---|---|
10.5286/ISIS.E.RB2000242-1 | GEM | 12 May 2024 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
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[author], [date], [title], [publisher],
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Professor Eugene Bychkov et al; (2021): Phase-change mechanism in Ga2Te3 liquid promising for high-temperature memory applications, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2000242
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