ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Experimental evaluation of the reliability of Wide Band Gap semiconductor devices during Space Weather Events
Abstract: Nowadays, electronic systems in avionics and automotive use new Wide Band Gap semiconductor Power Devices, mainly based on Silicon Carbide material. The hazard of device damages induced by neutrons due to the interaction of Terrestrial Cosmic Rays, which depend on the Space Weather conditions near earth, is a critical issue for the reliability of these devices. Usually, the neutrons effects on the Power Devices are investigated at room temperature. We propose to perform neutron tests of SiC and Si Power MOSFET?s at different temperatures, in the range -50 °C 200 °C.
Principal Investigator: Professor Fabio Principato
Experimenter: Mr Vincenzo Cantarella
Experimenter: Dr Francesco Pintacuda
Local Contact: Dr Maria Kastriotou
DOI: 10.5286/ISIS.E.RB2000228
ISIS Experiment Number: RB2000228
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.RB2000228-1 | CHIPIR | 26 May 2024 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Professor Fabio Principato et al; (2021): Experimental evaluation of the reliability of Wide Band Gap semiconductor devices during Space Weather Events, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2000228
Data is released under the CC-BY-4.0 license.
