ISIS Neutron and Muon Source Data Journal

Photoionisation spectroscopy of negatively charged muonium in GaAs

Abstract: Here we propose a photoexcited muon spin spectroscopy experiment to ionise a negatively charged muonium in GaAs. The muonium state behaves as an acceptor level in GaAs, which is estimated to be 0.9 eV below the conduction band minimum. Its resonant photoionisation is measurable in the MuSR spectrum, as demonstrated by a pilot experiment in ARGUS. The resonant energy allows us to measure the defect level, which is otherwise available only from the Arrhenius activation energy. The measurement is therefore extremely accurate and athermal, and a temperature dependent measurement tells us the shift of the defect level relative to the band edges. This study helps understanding the behaviour of a hydrogen atom in GaAs, which has a wide range of uses in semiconductor industries.

Experimenter: Professor Koichiro Shimomura
Experimenter: Dr P.W. Mengyan
Local Contact: Dr Koji Yokoyama
Experimenter: Professor Roger Lichti
Experimenter: Dr James Lord
Experimenter: Mr Mulder Goeks

DOI: 10.5286/ISIS.E.RB2010755

ISIS Experiment Number: RB2010755

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Professor Koichiro Shimomura et al; (2020): Photoionisation spectroscopy of negatively charged muonium in GaAs, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2010755

Data is released under the CC-BY-4.0 license.