ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Neutron Effects in the Peripheral Circuitry of 3D NAND Flash Memories
Abstract: This proposal aims at further studying the effects of atmospheric neutrons on 3D NAND Flash memories with vertical architecture, by investigating the impact of the peripheral circuitry. Indeed, in complex devices such as Flash memories, which include heterogeneous building blocks and carry out complex algorithms even for the most basic functions, the chances of neutron-induced malfunctions related to the peripheral circuitry may be significant. For this reason, we propose a new set of experiments in which the devices will be powered and operated with different duty cycles, program modes, and test patterns under neutron exposure.
Principal Investigator: Professor Simone Gerardin
Experimenter: Professor Alessandro Paccagnella
Local Contact: Dr Carlo Cazzaniga
Experimenter: Dr Marta Bagatin
DOI: 10.5286/ISIS.E.RB2010502
ISIS Experiment Number: RB2010502
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.RB2010502-1 | CHIPIR | 29 September 2023 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
Select the data format above to find
out more about it.
Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Professor Simone Gerardin et al; (2020): Neutron Effects in the Peripheral Circuitry of 3D NAND Flash Memories , STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2010502
Data is released under the CC-BY-4.0 license.
