ISIS Neutron and Muon Source Data Journal

Latchup characterization of 7-nm technology node using neutron beam at ChipIR

Abstract: Semiconductor industry is currently offering 7 nm technology node with FinFET fabrication processes. Latchup causing mechanisms and rates for FinFET technologies are expected to be vastly different from those for planar technologies. This proposal is for the investigation of neutron-induced latchup for 7 nm circuit designs. We will be using test ICs containing sequential circuit designs . Since latchup may actually destroy the IC functionality, tests are needed to estimate neutron-induced failure rates to allow for development of predictive models. Results from these experiments will be supported with TCAD simulations and circuit simulations. Results will support a dissertation and will be disseminated through publications at conferences and journals

Principal Investigator: Professor Bharat Bhuva
Experimenter: Mr Jingchen Cao
Experimenter: Mr Shi-Jie Wen
Local Contact: Dr Carlo Cazzaniga

DOI: 10.5286/ISIS.E.RB2000029

ISIS Experiment Number: RB2000029

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Professor Bharat Bhuva et al; (2019): Latchup characterization of 7-nm technology node using neutron beam at ChipIR, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2000029

Data is released under the CC-BY-4.0 license.