ISIS Neutron and Muon Source Data Journal

Neutron-induced Single Event Upsets in SRAMs for Terrestrial Enviroment

Abstract: As the technology node of CMOS electronic devices scales down, they become more and more susceptible to bit upsets caused by single particles impinging on the device, neutrons being part of them. We plan to measure the sensitivity of various synchronous random access memories (SRAM) to neutron generated bit upsets. In particular, we intend to test SRAM based FPGAs. This will provide us an excellent opportunity to compare experimental results to our theoretical models of calculating neutron single event upset (SEU) sensitivity based on heavy ion irradiation data. In addition, we intend to test the SRAM of a novel system on a chip (SoC) designed for ultra low power.

Principal Investigator: Dr Avner Haran
Experimenter: Professor Roberto Senesi
Experimenter: Professor Carla Andreani
Local Contact: Dr Carlo Cazzaniga
Experimenter: Dr Chris Frost
Experimenter: Mr Nir Yitzhak
Experimenter: Dr Enrico Preziosi
Experimenter: Dr Letizia Verdolotti
Experimenter: Dr Chiara Santillo
Experimenter: Mr Eran Mazal-Tov
Experimenter: Mr Eitan Keren

DOI: 10.5286/ISIS.E.RB2000018

ISIS Experiment Number: RB2000018

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
Select the data format above to find out more about it.

Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Avner Haran et al; (2019): Neutron-induced Single Event Upsets in SRAMs for Terrestrial Enviroment, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2000018

Data is released under the CC-BY-4.0 license.