ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
ChipIR Commercial Access Infineon OX12 - week51/2019
Abstract: High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR), notably the nucleon part. As a consequence, device development has to ensure adequate radiation hardness for every device technology. This aim can only partly be met by device and technology simulations and, therefore, also calls for extensive device tests. In order to reduce testing times accelerated irradiation tests at facilities with a nucleon energy spectrum close to the natural terrestrial CR are essential. The thus obtained failures rates will be compared to simulation predictions and storage tests.
Principal Investigator: Dr Gerald Soelkner
Experimenter: Mr Patrick Schindler
Experimenter: Mr Matthias Benda
Local Contact: Dr Carlo Cazzaniga
Experimenter: Mrs Renate Adele Bommersbach
Experimenter: Dr Felix Schubert
DOI: 10.5286/ISIS.E.RB2000102
ISIS Experiment Number: RB2000102
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.RB2000102-1 | CHIPIR | 20 December 2022 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
Select the data format above to find
out more about it.
Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr Gerald Soelkner et al; (2019): ChipIR Commercial Access Infineon OX12 - week51/2019, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2000102
Data is released under the CC-BY-4.0 license.
