ISIS Neutron and Muon Source Data Journal

Terrestrial neutrons radiation tolerance for silicon carbide (SiC) power MOSFETs and diodes

Abstract: Silicon Carbide (SiC) is a wide bandgap semiconductor of great interest for power devices used in various ground and avionic applications. SiC are also considered a promising technology for space and accelerators applications. However, SiC MOSFETs and diodes are sensitive to Single Event Burnout (SEB) failures when exposed to high energy neutrons, which crucially affect the reliability in the terrestrial environment. The SEB mechanism in SiC components is still an important topic of research. It was discussed that it is the same between SiC diodes and SiC MOSFETs and that it is different from the one in Si MOSFETs. Performing SEB testing of SiC components at the ChipIR beamline will provide important information on the atmospheric-like neutrons tolerance, allowing comparisons with the previous results from protons, heavy-ions and neutrons and important information on the SEB mechanism.

Principal Investigator: Mr Ruben Garcia Alia
Experimenter: Mr Andrea Coronetti
Experimenter: Dr Judith Woerle
Experimenter: Ms Corinna Martinella
Experimenter: Dr Pablo Fernández Martínez
Local Contact: Dr Carlo Cazzaniga
Experimenter: Mr Thomas Ziemann
Experimenter: Professor Ulrike Grossner

DOI: 10.5286/ISIS.E.RB2000059

ISIS Experiment Number: RB2000059

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Mr Ruben Garcia Alia et al; (2019): Terrestrial neutrons radiation tolerance for silicon carbide (SiC) power MOSFETs and diodes, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2000059

Data is released under the CC-BY-4.0 license.