ISIS Neutron and Muon Source Data Journal

This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.


ChipIR Commercial Access Infineon OX10 - week37/2019

Abstract: High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR), notably the nucleon part. As a consequence, device development has to ensure adequate radiation hardness for every device technology. This aim can only partly be met by device and technology simulations and, therefore, also calls for extensive device tests. In order to reduce testing times accelerated irradiation tests at facilities with a nucleon energy spectrum close to the natural terrestrial CR are essential. The thus obtained failures rates will be compared to simulation predictions and storage tests.

Principal Investigator: Dr Gerald Soelkner
Experimenter: Mr Matthias Benda
Experimenter: Mrs Renate Adele Bommersbach
Local Contact: Dr Carlo Cazzaniga
Experimenter: Mr Patrick Schindler

DOI: 10.5286/ISIS.E.RB2000038

ISIS Experiment Number: RB2000038

Part DOI Instrument Public release date Download Link
10.5286/ISIS.E.RB2000038-1 CHIPIR 13 September 2022 Download
10.5286/ISIS.E.RB2000038-2 CHIPIR 25 September 2022 Download

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
Select the data format above to find out more about it.

Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Gerald Soelkner et al; (2019): ChipIR Commercial Access Infineon OX10 - week37/2019, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2000038

Data is released under the CC-BY-4.0 license.



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