ISIS Neutron and Muon Source Data Journal

Characterizing Mu in 6H-SiC with RF-MuSR

Abstract: We propose a set of RF measurements on Silicon Carbide (polytype 6H) to identify and characterize the muonium species present below room temperature. One of the main goals of characterizing muonium with this experiment is to provide data that is essential to the analysis and interpretation of our recent experiment (RB1910567) where we used the laser system on HIFI to directly ionize Mu centers in an effort to directly measure the muonium impurity levels. In semiconductors, isolated hydrogen is electrically active and unavoidable in both material production and use. The high reactivity of H makes it a very interesting impurity but also very difficult to study. Muons have been very successful in functioning as an experimentally accessible analogue to isolated H impurities in materials. The proposed measurements will also add valuable information to the understanding of H impurities in SiC

Principal Investigator: Dr P.W. Mengyan
Experimenter: Dr Koji Yokoyama
Experimenter: Dr Helena Alberto
Experimenter: Mr Mulder Goeks
Experimenter: Dr James Lord
Experimenter: Professor Roger Lichti
Experimenter: Dr Rui Vilao

DOI: 10.5286/ISIS.E.RB1920595

ISIS Experiment Number: RB1920595

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
Select the data format above to find out more about it.

Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr P.W. Mengyan et al; (2019): Characterizing Mu in 6H-SiC with RF-MuSR, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1920595

Data is released under the CC-BY-4.0 license.