ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Can photo-MuSR method measure carrier recombination lifetime in direct gap semiconductors?
Abstract: In the past years we have developed a method measuring carrier recombination lifetime in semiconductors using the photo-MuSR setup in HIFI. These studies have focused on indirect semiconductors, such as Si and Ge, with excess carrier lifetimes longer than 1 microseconds. On the other hand many of the emerging semiconductors have a direct band structure, where injected carriers are funneled into the band minimum and quickly recombined typically in the order of nanoseconds. In this study we aim to apply the photo-MuSR method to these cases utilizing the upgraded DAE in HIFI. Because the experimental approach is different from the previous ones, we put this proposal in as a new submission.
Principal Investigator: Dr Koji Yokoyama
Experimenter: Mr Mulder Goeks
Experimenter: Dr P.W. Mengyan
Experimenter: Professor Roger Lichti
Experimenter: Dr James Lord
DOI: 10.5286/ISIS.E.RB1920737
ISIS Experiment Number: RB1920737
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.RB1920737-1 | HIFI | 20 September 2022 | Download |
| 10.5286/ISIS.E.RB1920737-2 | HIFI | 18 September 2022 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr Koji Yokoyama et al; (2019): Can photo-MuSR method measure carrier recombination lifetime in direct gap semiconductors?, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1920737
Data is released under the CC-BY-4.0 license.
