ISIS Neutron and Muon Source Data Journal

Detection of Spin-Polarized Conduction Electrons in Si by MuSR

Abstract: One of the challenges of developing Silicon-based spintronics technology is developing non-destructive methods for characterizing spin-polarized conduction electrons. Si is indirect bandgap and optical magneto-optical methods don't work. We have demonstrated that laser-injected spin-polarized electrons enhance the spin-relaxation of bound Mu- in GaAs. The goal of the proposed experiment is to demonstrate the ability of MuSR to detect spin-polarized electrons in Si and an indirect bandgap semiconductor for the first time, thus opening the possibility for MuSR to contribute uniquely to semiconductor spintronics research. A 10 ns duration UV pump pulse tuned to the spin-polarization resonance will inject spin-polarized electrons in bulk Si and the HI Field muon spectrometer field-tuned to the avoided level crossing resonance of various Mu species in Si will probe laser-induced changes.

Principal Investigator: Dr Harry Tom
Experimenter: Miss Jingliang Miao
Experimenter: Professor Alan Drew
Experimenter: Mr John Muse
Experimenter: Dr Koji Yokoyama
Experimenter: Professor Eiko Torikai
Experimenter: Professor Kanetada Nagamine

DOI: 10.5286/ISIS.E.RB1510248

ISIS Experiment Number: RB1510248

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Harry Tom et al; (2015): Detection of Spin-Polarized Conduction Electrons in Si by MuSR, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1510248

Data is released under the CC-BY-4.0 license.