ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Effects of Muon Irradiation on Advanced Flash Memories
Abstract: We propose to expose for the first time advanced Flash memories to muons. The continuous scaling down of technology (NAND Flash memories are the electronic components in which the feature size is scaled more rapidly) may cause lighter particles to induce upsets in floating gate cells. This was the case with SRAM in the recent past, which, at very small feature size, has become sensitive to muons. No experimental data are available in the literature for Flash memories in this respect. Memories with both NAND (down to a feature size of 16 nm) and NOR (down to 45 nm) architecture will be exposed to muon beam. Thanks to the collaboration with the manufacturer, we will have access to test modes routines that are not available to the user.
Principal Investigator: Professor Alessandro Paccagnella
Experimenter: Dr Marta Bagatin
Experimenter: Professor Giuseppe Gorini
Experimenter: Professor Simone Gerardin
Experimenter: Professor Carla Andreani
Local Contact: Dr Adrian Hillier
DOI: 10.5286/ISIS.E.RB1510577
ISIS Experiment Number: RB1510577
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.58451661 | CHRONUS | 18 April 2018 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
Select the data format above to find
out more about it.
Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Professor Alessandro Paccagnella et al; (2015): Effects of Muon Irradiation on Advanced Flash Memories, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1510577
Data is released under the CC-BY-4.0 license.
