ISIS Neutron and Muon Source Data Journal

Muon-induced soft errors in advanced Flash Memories

Abstract: The feature size of Flash memories has been aggressively scaled. As a result, the memories built with this technology have the largest capacity in the semiconductor industry, but at the same time have become sensitive to internal and external disturbs. We plan to expose different Flash memories at ISIS, to study the response of these devices to the muon beam provided by the RIKEN-RAL line, which produces muons with energies within the terrestrial muons spectrum. Samples with both NAND (with a feature size down to 16-nm) and NOR (down to 45 nm) architecture will be exposed to muons and results will be compared with those previously obtained with ionizing particles with larger linear energy transfer, such as alpha particles and heavy ions. The analysis will be focused on Floating Gate (FG) errors, in order to understand if muons can be a significant threat to data integrity at sea level.

Principal Investigator: Professor Alessandro Paccagnella
Experimenter: Professor Carla Andreani
Experimenter: Dr Marta Bagatin
Local Contact: Dr Adrian Hillier
Experimenter: Professor Simone Gerardin
Experimenter: Professor Giuseppe Gorini

DOI: 10.5286/ISIS.E.RB1620020

ISIS Experiment Number: RB1620020

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Professor Alessandro Paccagnella et al; (2016): Muon-induced soft errors in advanced Flash Memories , STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1620020

Data is released under the CC-BY-4.0 license.