ISIS Neutron and Muon Source Data Journal

Investigation on the effect of muons on various types of commercial electronic devices: memories and programmable circuits

Abstract: As part of a current effort to fully characterize the relative radiation response of electronic devices, our research team proposes to use the muon beam available at ISIS to evaluate the behaviour of SRAMs of different technology nodes, as well as that of FRAM, MRAM and Flash memories. The proposed testing methodology uses a combination of static and dynamic irradiation tests and can reveal vulnerabilities within the component. In order to attain a larger coverage of the effects of muons on the latest electronics, we intend also to test their impact on programmable circuits like SRAM-based FPGAs built with technology below 30nm. These tests will allow analysing the impact of muons not only on the storage elements, but also on the reliability of the devices at application level. This experiment requests beam energies that are available at port four of RIKEN-RAL Muon Facility in ISIS.

Principal Investigator: Dr Luigi Dilillo
Experimenter: Mr Thierry Gil
Experimenter: Mr Alexandre Bosser
Local Contact: Dr Adrian Hillier

DOI: 10.5286/ISIS.E.RB1620194

ISIS Experiment Number: RB1620194

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
Select the data format above to find out more about it.

Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Luigi Dilillo et al; (2016): Investigation on the effect of muons on various types of commercial electronic devices: memories and programmable circuits, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1620194

Data is released under the CC-BY-4.0 license.