ISIS Neutron and Muon Source Data Journal

Intrinsic defect structures in zinc oxide

Abstract: Zinc oxide is an important semiconductor material used in a wide range of industrial applications, many of which require both n-type and p-type components. It can easily be doped n-type, but it is difficult to dope p-type. This has been attributed to the nature of its intrinsic defects, which cause a self-compensation of free carriers. It is, therefore, important to understand the nature of its intrinsic defects. There have been many first-principles calculations of the stability of intrinsic defects in zinc oxide. These theoretical predictions also give the local distortion of the surrounding lattice, and this can be tested directly using diffuse neutron scattering. We have large single crystals of as-grown nominally stoichiometric, oxidised and reduced zinc oxide, and we propose to measure the diffuse scattering using neutron Laue diffraction on SXD.

Principal Investigator: Professor Jon Goff
Experimenter: Dr Dharmalingan Prabhakaran
Experimenter: Mr David Bowman
Experimenter: Dr Uthayakumar Sivaperumal
Experimenter: Mr Tim Lehner
Experimenter: Mr Chris Nuttall
Local Contact: Dr Matthias Gutmann
Experimenter: Dr Rob Potter
Experimenter: Dr Keith Refson

DOI: 10.5286/ISIS.E.RB1610310

ISIS Experiment Number: RB1610310

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Professor Jon Goff et al; (2016): Intrinsic defect structures in zinc oxide, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1610310

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