ISIS Neutron and Muon Source Data Journal

Muon Spin Relaxation detection of Spin-Polarized Conduction Electrons in Silicon

Abstract: The proposed experiment is to observe optical spin-injection in Silicon through MuSR detection. An important part of research in next generation electronics focusses on the manipulation of spin as well as the charge of electrons in semiconductor devices. This may lead to improved integration of memory and processing resulting in higher density and lower heat dissipation. Silicon is an indirect bandgap material and it is generally accepted that optical spin-injection does not occur. We believe that it is possible in a narrow spectral range at the indirect bandgap and that it can be detected using the intrinsic spin sensitivity of MuSR. If MuSR is able to detect that spin-polarization, it will establish a particle-based probe for advancing Silicon spintronics. If optical spin-injection is observed, it will establish a powerful optical tool for studying spin-dynamics in Silicon.

Principal Investigator: Dr Harry Tom
Experimenter: Dr James Lord
Experimenter: Miss Jingliang Miao
Experimenter: Mr John Muse
Experimenter: Dr Koji Yokoyama
Experimenter: Professor Alan Drew

DOI: 10.5286/ISIS.E.RB1610525

ISIS Experiment Number: RB1610525

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Harry Tom et al; (2016): Muon Spin Relaxation detection of Spin-Polarized Conduction Electrons in Silicon, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1610525

Data is released under the CC-BY-4.0 license.