This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Carrier recombination lifetime spectroscopy with photo-MuSR: Measuring bulk and surface lifetime in one go
Abstract: Having established the carrier lifetime spectroscopy in intrinsic Si with the photo-MuSR method in our previous beam times, we recently found its sensitivity for both bulk and surface recombination rate. This is a very unique and important feature because there is no other lifetime spectroscopy technique that can measure both of them independently from a single measurement. To further develop and investigate this method, we need to change the muon implantation depth to obtain a clearer picture of carrier dynamics and more accurate fitting. The wafer surface may be passivated for lower surface velocity to compare the carrier dynamics with an as-received wafer.
Principal Investigator: Dr Koji Yokoyama
Experimenter: Miss Jingliang Miao
Experimenter: Dr James Lord
Experimenter: Professor Alan Drew
DOI: 10.5286/ISIS.E.RB1720505
ISIS Experiment Number: RB1720505
Part DOI | Instrument | Public release date | Download Link |
---|---|---|---|
10.5286/ISIS.E.87841950 | HIFI | 23 November 2020 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr Koji Yokoyama et al; (2017): Carrier recombination lifetime spectroscopy with photo-MuSR: Measuring bulk and surface lifetime in one go, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1720505
Data is released under the CC-BY-4.0 license.