ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Interaction of muonium centres and excess carriers in highly injected silicon
Abstract: We have developed a method to measure carrier recombination lifetime in crystalline silicon with the photo-muSR technique. The key of the method is to measure the dependence of relaxation rate of muon asymmetry on the excess carrier density, and characterise it by a power law. The method is also applicable in higher injection levels by increasing the applied longitudinal field. We found that the power is the same (0.7) in the lower three injection conditions, but changes to 0.4 in the highest one, indicating that the high injection level (or the high field) induces a change in the interaction between muonium centres and excess carriers. This proposal investigates the change in the power in detail, and study the muonium interaction and associated dynamics.
Principal Investigator: Dr Koji Yokoyama
Experimenter: Professor Alan Drew
Experimenter: Miss Jingliang Miao
Experimenter: Dr James Lord
DOI: 10.5286/ISIS.E.RB1710292
ISIS Experiment Number: RB1710292
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.84801477 | HIFI | 23 March 2020 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr Koji Yokoyama et al; (2017): Interaction of muonium centres and excess carriers in highly injected silicon, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1710292
Data is released under the CC-BY-4.0 license.
