ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Power devices failure rate evaluation under neutron irradiation in ChipIr
Abstract: The power electronic devices are subjected to terrestrial radiation field and they result particularly sensitive to the terrestrial neutron field. Neutrons interact with the power devices and cause significant damages. Single Event Burnout (SEB) is the most relevant damage caused by neutrons interaction with power electronic devices and it causes their completely destruction. We performed preliminary tests on power devices, and in particular on Power MOSFETs, in two different neutron facilities: ANITA Neutron Facility of the Uppsala University (Sweden), and 241Am-Be Neutron Irradiator of the University of Palermo (Italy). These preliminary tests underlined the Power MOSFETs sensibility to the neutron irradiation and demonstrated the neutron capability to induce SEB.
Principal Investigator: Dr Carlo Cazzaniga
Experimenter: Mr Nicoḷ Marchese
DOI: 10.5286/ISIS.E.RB1700064
ISIS Experiment Number: RB1700064
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.85180022 | CHIPIR | 26 February 2020 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
Select the data format above to find
out more about it.
Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr Carlo Cazzaniga et al; (2017): Power devices failure rate evaluation under neutron irradiation in ChipIr , STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1700064
Data is released under the CC-BY-4.0 license.
