ISIS Neutron and Muon Source Data Journal

Effect of electric field on paramagnetic state formation in molecular semiconductors

Abstract: The effect of electric field on the diamagnetic and paramagetic muon spin rotation signals will be investigated for the organic molecular semiconductors NPB and TPBi . These materials find application as active layers in electronic devices such as the organic light emitting diode (OLED). The proposed measurements will complement a programme of low energy muon studies of active OLED devices recently begun at PSI in Switzerland. The key question to be addressed is whether the magnitude of internal electric field present near the heterojunction within the OLED is sufficently large to modify the balance of diamagnetic and paramagnetic states within the organic semiconductors. If so then implanted muons can be shown to provide a valuable new method of mapping out the internal electric field profile within an active organic electronic device.

Principal Investigator: Dr Francis Pratt
Experimenter: Professor Alan Drew
Experimenter: Dr Benjamin Huddart
Experimenter: Dr James Lord
Experimenter: Professor Tom Lancaster
Experimenter: Dr Monkman
Experimenter: Dr Matthew Worsdale

DOI: 10.5286/ISIS.E.RB1620280

ISIS Experiment Number: RB1620280

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Francis Pratt et al; (2016): Effect of electric field on paramagnetic state formation in molecular semiconductors , STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1620280

Data is released under the CC-BY-4.0 license.