ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Cypress Semiconductor High-Energy Neutron Evaluation
Abstract: 1) Neutron testing of NVM 65nm FL-L products. These flash memories will be programmed and exposed to neutrons to count the number of bit flips.2) Neutron testing of NVM 65nm GL-S products. This flash memory will be programmed and exposed to neutrons to count the number of bit flips.3) Neutron testing of NVM 45nm GL-T products. This flash memory will be programmed and exposed to neutrons to count the number of bit flips and monitor for latching performance.4) Neutron testing on 40nm MicroController Traveo product. The goal of this experiment will be to subject the programmed memory areas of the device (both flash and SRAM) and monitor for bit flips due to the neutron beam. Current will also be monitored to look for latch-up.
Principal Investigator: Mr Francis Classe
Local Contact: Dr Chris Frost
Experimenter: Mr Jake Tausch
DOI: 10.5286/ISIS.E.RB1700076
ISIS Experiment Number: RB1700076
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.85212104 | CHIPIR | 23 March 2020 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
Select the data format above to find
out more about it.
Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Mr Francis Classe et al; (2017): Cypress Semiconductor High-Energy Neutron Evaluation, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1700076
Data is released under the CC-BY-4.0 license.
