ISIS Neutron and Muon Source Data Journal

Single- and Multibit SER Measurements of semiconductors for recent technology nodes

Abstract: Modern semiconductor-based components used, e.g., in automotive vehicles, contain registers and random access memory (SRAM). Due to naturally occurring ionising radiation, a.o. neutrons due to cosmic high-energy radiation interacting with the earth's atmosphere, these SRAMs and logic registers are prone to so-called 'bit-flips', e.g. changing the information content stored within the memory cells.To ensure the functionality of the electronic components and to be able to implement appropriate safety measures, the amount of bit-flips, the so-called 'soft-error rate' (SER) has to be determined in accelerated measurements.Measurements of the neutron SER using a beam which resembles the terrestrial neutron flux is currently only possible at two places, Los Alamos and ChipIR at RAL.We want to determine the single-bit and multi-bit upsets induced by neutrons on recent technology nodes.

Principal Investigator: Dr Karsten Ermisch
Local Contact: Dr Carlo Cazzaniga
Experimenter: Mr Gunnar Rott

DOI: 10.5286/ISIS.E.RB1700078

ISIS Experiment Number: RB1700078

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Karsten Ermisch et al; (2017): Single- and Multibit SER Measurements of semiconductors for recent technology nodes, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1700078

Data is released under the CC-BY-4.0 license.