ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Photocarrier lifetime and its temperature dependence in doped silicon
Abstract: In the previous beamtime, RB1520457, we have found that the relaxation rate can be used as a measure of the photocarrier density in intrinsic silicon. This method has been applied to measure the lifetime of photocarriers in two different temperatures. In this proposal we continue to measure the lifetime and its temperature dependence in doped silicon samples, which are important in many semiconductor applications. We also expect to observe an interaction between Mu and photoexcited minority carriers in doped silicon.
Principal Investigator: Dr Koji Yokoyama
Experimenter: Dr James Lord
Experimenter: Mrs Li Li
Experimenter: Miss Jingliang Miao
Experimenter: Professor Alan Drew
DOI: 10.5286/ISIS.E.RB1620458
ISIS Experiment Number: RB1620458
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.82527389 | HIFI | 19 March 2020 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr Koji Yokoyama et al; (2017): Photocarrier lifetime and its temperature dependence in doped silicon, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1620458
Data is released under the CC-BY-4.0 license.
