ISIS Neutron and Muon Source Data Journal

OX6 - Measurements of single-event burn-out of HV power devices for different technology nodes

Abstract: Measurements of single-event burn-out of HV power devices for different technology nodesHigh-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR), notably the nucleon part. As a consequence, device development has to ensure adequate radiation hardness for every device technology. This aim can only partly be met by device and technology simulations and, therefore, also calls for extensive device tests. In order to reduce testing times accelerated irradiation tests at facilities with a nucleon energy spectrum close to the natural terrestrial CR are essential. The thus obtained failures rates will be compared to simulation predictions and storage tests.

Principal Investigator: Dr Gerald Soelkner
Experimenter: Mr Patrick Schindler
Experimenter: Dr Maximilian Treiber
Experimenter: Mr Matthias Benda
Experimenter: Mrs Renate Adele Bommersbach
Local Contact: Dr Carlo Cazzaniga

DOI: 10.5286/ISIS.E.RB1900100

ISIS Experiment Number: RB1900100

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Gerald Soelkner et al; (2018): OX6 - Measurements of single-event burn-out of HV power devices for different technology nodes, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1900100

Data is released under the CC-BY-4.0 license.