ISIS Neutron and Muon Source Data Journal

MuSR study on optically injected electronic spin in GaAs

Abstract: In the field of semiconductor spintronics, n-type GaAs has been utilized as a prototype system, where one can inject electronic spin and study its behavior with optical techniques. On the other hand MuSR should have sensitivity to the electronic spin polarization because muonium in mF = 0 or +1 has significant difference in the muon spin relaxation due to the hyperfine interaction, and exchanges its bound electron with local environment. In this proposal we demonstrate this principle using photo-MuSR technique with optical spin orientation, and investigate its mechanism using a computer modeling.

Principal Investigator: Dr Koji Yokoyama
Experimenter: Dr Pavel Bakule
Experimenter: Dr Kazuki Ohishi
Experimenter: Professor Eiko Torikai
Experimenter: Professor Koichiro Shimomura
Experimenter: Dr Francis Pratt
Experimenter: Professor Kanetada Nagamine
Experimenter: Dr Ichiro Shiraki
Experimenter: Dr Harry Tom

DOI: 10.5286/ISIS.E.RB1820405

ISIS Experiment Number: RB1820405

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Koji Yokoyama et al; (2018): MuSR study on optically injected electronic spin in GaAs, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1820405

Data is released under the CC-BY-4.0 license.