ISIS Neutron and Muon Source Data Journal

ChipIR: Characterization of soft errors for the 7-nm FinFET technology node for thermal neutron exposures

Abstract: In addition to fast-neutron- and alpha particles, use of B10 in the fabrication process has resulted in high sensitivity to thermal neutrons for ICs fabricated at advanced technology nodes.. For the planar technologies, IC manufacturers had eliminated the use of B10 from the fabrication process. But with the introduction of FinFET technologies, IC manufacturers have reintroduced B10 in the fabrication process. Experiments at several facilities by different researchers have shown increased vulnerability to thermal neutrons for FinFET technologies. For FinFET technology, that contribution has increased to about 20%. In this project, we propose to measure the sensitivity of flip-flop cells fabricated at the 7-nm FinFET technology node to thermal neutrons.

Principal Investigator: Professor Bharat Bhuva
Local Contact: Dr Carlo Cazzaniga

DOI: 10.5286/ISIS.E.RB1900048

ISIS Experiment Number: RB1900048

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Professor Bharat Bhuva et al; (2018): ChipIR: Characterization of soft errors for the 7-nm FinFET technology node for thermal neutron exposures, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1900048

Data is released under the CC-BY-4.0 license.