ISIS Neutron and Muon Source Data Journal

Neutron-induced Failures in Advanced Power and Digital Semiconductor Technologies

Abstract: It is well known that atmospheric neutrons are one of the key threats to the reliability of electronic components. Effects related to radiation at sea level range from loss of information in digital memories to irreversible damage in power devices. The push towards electric mobility and autonomous driving, together with the ever-increasing integration of electronic chips inside modern cars, is making these issues more acute. The goal of this study is to improve the understanding of the failure mechanisms induced by neutrons in advanced power and digital semiconductor technologies used in the automotive industry, with ad-hoc experiments on devices used for power conversion and digital chips including memory elements of different types.

Principal Investigator: Professor Simone Gerardin
Local Contact: Dr Carlo Cazzaniga
Experimenter: Professor Alessandro Paccagnella
Experimenter: Dr Marta Bagatin
Experimenter: Mr Oscar Belletti
Experimenter: Mr Davide Cimmino
Experimenter: Mr Dennis Crippa
Experimenter: Dr Antonio Benfante

DOI: 10.5286/ISIS.E.RB1900053

ISIS Experiment Number: RB1900053

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Professor Simone Gerardin et al; (2018): Neutron-induced Failures in Advanced Power and Digital Semiconductor Technologies, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1900053

Data is released under the CC-BY-4.0 license.