ISIS Neutron and Muon Source Data Journal

Test of Neutron Effects On Low Power Devices

Abstract: Neutrons are the main source of secondary-radiation induced errors in VLSI at ground level and it is foreseen that the spread use of low power devices will exacerbate their impact. The goal of this experiment is to analyze the different impact of neutron induced errors on VLSI devices when they are operating at ultra low-power and at nominal conditions. The target of the investigation will be the reliability assessment of low power SRAM and DRAM memories and low power Microprocessors. This experiment has also the goal to evaluate the setup of a possible implementation for an ESA-Bexus project which would bring the entire architecture into the neutron rich Earth's stratosphere. The specific contribution of this experiment will be to provide a clear correlation focus only on the interaction of devices with neutron flows in a controlled environment.

Principal Investigator: Professor Marco Ottavi
Experimenter: Mr Mathijs Van de Poel
Experimenter: Mr Tiziano Fiorucci
Experimenter: Mr Bruno Luzzi
Experimenter: Dr Alessandra Menicucci
Experimenter: Mr federico filogonio
Experimenter: Professor Roberto Senesi
Experimenter: Dr Gianluca Furano
Local Contact: Dr Carlo Cazzaniga
Experimenter: Dr Pierfrancesco Ulpiani
Experimenter: Mr Luca Fiorentino
Experimenter: Professor Carla Andreani
Experimenter: Mr Dario Asciolla

DOI: 10.5286/ISIS.E.RB1800062

ISIS Experiment Number: RB1800062

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
Select the data format above to find out more about it.

Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Professor Marco Ottavi et al; (2018): Test of Neutron Effects On Low Power Devices, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1800062

Data is released under the CC-BY-4.0 license.