ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Investigation of neutron induced Single Event Effects on GaN high power devices
Abstract: Single Event Effects in power devices caused by neutrons on earth are an increasing problem because for more safety-related digital items. The fact that that there are few systematic studies of neutron related effects in power devices gets more and more relevant. For the new on the market GaN-HEMT high power transistors we propose to measure different device-designs, for different fluences, online with the broad neutron energy spectrum to investigate the failure rate and current path to get a better understanding of the failure behaviour for this kind of new devices.
Principal Investigator: Dr Stefan Hoeffgen
Experimenter: Dr Michael Steffens
Experimenter: Mr Eike Sören Paschkowski
Experimenter: Mrs Dorothea Wölk
Local Contact: Dr Carlo Cazzaniga
DOI: 10.5286/ISIS.E.RB1900034
ISIS Experiment Number: RB1900034
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.98023140 | CHIPIR | 28 September 2021 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr Stefan Hoeffgen et al; (2018): Investigation of neutron induced Single Event Effects on GaN high power devices, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1900034
Data is released under the CC-BY-4.0 license.
