ISIS Neutron and Muon Source Data Journal

OX04

Abstract: High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR), notably the nucleon part. As a consequence, device development has to ensure adequate radiation hardness for every device technology. This aim can only partly be met by device and technology simulations and, therefore, also calls for extensive device tests. In order to reduce testing times accelerated irradiation tests at facilities with a nucleon energy spectrum close to the natural terrestrial CR are essential. The thus obtained failures rates will be compared to simulation predictions and storage tests. A further aim is the close comparison of results obtained at different accelerator facilities to ensure the relevance and quality of the device tests. This latter goal is important as no single radiation facility is able to perfect

Principal Investigator: Dr Gerald Soelkner
Experimenter: Mr Matthias Benda
Local Contact: Dr Chris Frost

DOI: 10.5286/ISIS.E.RB1800107

ISIS Experiment Number: RB1800107

Publisher: STFC ISIS Neutron and Muon Source

Data format: RAW/Nexus
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Data Citation

The recommended format for citing this dataset in a research publication is as:
[author], [date], [title], [publisher], [doi]

For Example:
Dr Gerald Soelkner et al; (2018): OX04, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1800107

Data is released under the CC-BY-4.0 license.