This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
ASML SiC MOSFET test on ChipIR
Abstract: High voltage semiconductor switches are susceptible to failure due to cosmic rays, when used in the half bridge configuration that is typical for swtich mode power converters. A cosmic ray will create a conductive path in an off-state junction. In combination with the other, on-state half bridge swtich this will short the low impedance supply bus and one or both swtiches will fail due to the resulting excessively peaking current. This effect has also been demonstratd in terrestrial applications as established in failures in installed base, laboratory tests and earlier neutron beam irradiation tests. The target of this test campaign is to qualify a new range of silicon-carbide type MOSFETs for appliaction in power amplifiers used in ASML's lithography machines.
Principal Investigator: Mr Jeroen van Duivenbode
Experimenter: Mr Michael Nakhleh
Local Contact: Dr Carlo Cazzaniga
Experimenter: Mr Geert Talens
DOI: 10.5286/ISIS.E.RB1800097
ISIS Experiment Number: RB1800097
Part DOI | Instrument | Public release date | Download Link |
---|---|---|---|
10.5286/ISIS.E.92921961 | CHIPIR | 27 April 2021 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
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[author], [date], [title], [publisher],
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Mr Jeroen van Duivenbode et al; (2018): ASML SiC MOSFET test on ChipIR, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1800097
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