ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Thermal neutrons sensitivity of memories and computing devices
Abstract: Modern devices include Boron-10 in the Silicon doping. The interaction between B-10 and thermal neutrons is likely to generate alpha particles, which lead to transient faults. The goal of this proposal is to continue our evaluation of the resilience of modern memories (DDR3, DDR4) and computing devices. We will study the neutron sensitivity of modern System on Chips embedding ARM core (with the BIG-little technology), FPGA programmable logic, Graphics Processing Units, and multi-core processors. During our experiments we will run object-detection frameworks for automotive applications implementing the hardening solutions we have developed based on previous experiments results.
Principal Investigator: Dr Paolo Rech
Local Contact: Dr Carlo Cazzaniga
Experimenter: Mr Pablo Bodmann
Experimenter: Dr Fernando Fernandes Dos Santos
DOI: 10.5286/ISIS.E.RB1900122
ISIS Experiment Number: RB1900122
| Part DOI | Instrument | Public release date | Download Link |
|---|---|---|---|
| 10.5286/ISIS.E.RB1900122-1 | ALF | 18 February 2022 | Download |
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr Paolo Rech et al; (2019): Thermal neutrons sensitivity of memories and computing devices, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB1900122
Data is released under the CC-BY-4.0 license.
