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Effect of electron and hole doping on the spin gap formation in Kondo insulator CeFe2Al10
Abstract: CeFe2Al10 belongs to the CeT2Al10 family (T: Ru, Os, Fe), which exhibits Kondo-insulator properties, with an unusual competition of strongly anisotropic crystal-field and exchange interactions, as well as c-f hybridization. The spin gap has been investigated in these parent compounds using inelastic neutron and exhibits strong anisotropic behavior. Further the effect of electron doping shows dramatic effect in the spin gap of T=Ru and Os, but hole doping does not affect the spin gap very much. Recently the magnetic and transport properties of electron and hole doped CeFe2Al10 have been investigated, which show very dramatic changes. We therefore propose here to study the evolution of its spin-gap magnetic response as a function of electron or hole doping in CeFe2Al10 using MERLIN.
Public release date: 05 May 2019
Principal Investigator: Dr Jean-Michel Mignot
Experimenter: Dr Devashi Adroja
Experimenter: Professor Pavel Alekseev
Experimenter: Dr Jean-Louis Robert
Experimenter: Professor Masafumi Sera
Experimenter: Dr Sylvain Petit
DOI: 10.5286/ISIS.E.79107034
Parent DOI: 10.5286/ISIS.E.RB1610498
ISIS Experiment Number: RB1610498
Part Number: 1
Date of Experiment: 28 April 2016
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
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Dr Jean-Michel Mignot et al; (2016): Effect of electron and hole doping on the spin gap formation in Kondo insulator CeFe2Al10, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.79107034
Data is released under the CC-BY-4.0 license.