ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Latchup characterization of 7-nm technology node using neutron beam at ChipIR
Abstract: Semiconductor industry is currently offering 7 nm technology node with FinFET fabrication processes. Latchup causing mechanisms and rates for FinFET technologies are expected to be vastly different from those for planar technologies. This proposal is for the investigation of neutron-induced latchup for 7 nm circuit designs. We will be using test ICs containing sequential circuit designs . Since latchup may actually destroy the IC functionality, tests are needed to estimate neutron-induced failure rates to allow for development of predictive models. Results from these experiments will be supported with TCAD simulations and circuit simulations. Results will support a dissertation and will be disseminated through publications at conferences and journals
Public release date: 24 October 2022
Principal Investigator: Professor Bharat Bhuva
Experimenter: Mr Shi-Jie Wen
Local Contact: Dr Carlo Cazzaniga
Experimenter: Mr Jingchen Cao
DOI: 10.5286/ISIS.E.RB2000029-2
Parent DOI: 10.5286/ISIS.E.RB2000029
ISIS Experiment Number: RB2000029
Part Number: 2
Date of Experiment: 22 October 2019
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Professor Bharat Bhuva et al; (2019): Latchup characterization of 7-nm technology node using neutron beam at ChipIR, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2000029-2
Data is released under the CC-BY-4.0 license.
