ISIS Neutron and Muon Source Data Journal
This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
ChipIR Commercial Access Infineon OX10 - week37/2019
Abstract: High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR), notably the nucleon part. As a consequence, device development has to ensure adequate radiation hardness for every device technology. This aim can only partly be met by device and technology simulations and, therefore, also calls for extensive device tests. In order to reduce testing times accelerated irradiation tests at facilities with a nucleon energy spectrum close to the natural terrestrial CR are essential. The thus obtained failures rates will be compared to simulation predictions and storage tests.
Public release date: 13 September 2022
Principal Investigator: Dr Gerald Soelkner
Experimenter: Mr Matthias Benda
Experimenter: Mrs Renate Adele Bommersbach
Local Contact: Dr Carlo Cazzaniga
Experimenter: Mr Patrick Schindler
DOI: 10.5286/ISIS.E.RB2000038-1
Parent DOI: 10.5286/ISIS.E.RB2000038
ISIS Experiment Number: RB2000038
Part Number: 1
Date of Experiment: 11 September 2019
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr Gerald Soelkner et al; (2019): ChipIR Commercial Access Infineon OX10 - week37/2019, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.RB2000038-1
Data is released under the CC-BY-4.0 license.
